The BC858 is a general-purpose PNP bipolar junction transistor (BJT) designed for low-power amplification and switching applications. It is housed in a compact SOT-23 surface-mount device (SMD) package, making it suitable for modern high-density electronic designs.
Specifications:
- Type: PNP Transistor
- Collector-Emitter Voltage (Vce): 30V
- Collector-Base Voltage (Vcbo): 30V
- Emitter-Base Voltage (Vebo): 5V
- Collector Current (Ic): 100mA
- Power Dissipation (Ptot): 250mW
Pin Configuration:
- Emitter
- Base
- Collector
Key Characteristics:
- DC Current Gain (hFE): Typically ranges from 110 to 800, depending on the specific variant (A, B, or C).
- Transition Frequency (fT): 150MHz
- Collector-Emitter Saturation Voltage (Vce(sat)): 200mV
- Noise Figure: 2dB
Features:
- High DC Current Gain
- Low Noise
- High Transition Frequency
- Low Saturation Voltage
- Suitable for Surface-Mount Applications
Applications:
- General-Purpose Amplification
- Switching
- Signal Processing
- Low-Power Applications
Note: Product images are for illustrative purposes only and may differ from the actual product.