FDN357P P-Channel Logic Level Enhancement Mode MOSFET SOT-23 SMD Package

The FDN357P is a P-channel logic level enhancement mode MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for low-voltage, high-current switching applications. It is housed in a compact SOT-23 surface-mount device (SMD) package, making it ideal for high-density circuit board layouts. Here’s a detailed description of the product:

Key Features:

• Type: P-Channel MOSFET
• Package: SOT-23 (Surface Mount Device)
• Polarity: P-Channel
• Maximum Drain-Source Voltage (Vds): 30V
• Maximum Continuous Drain Current (Id): 1.9A
• Maximum Power Dissipation (Pd): 1.25W
• Low On-Resistance (Rds(on)): Typically 0.08Ω at Vgs = -10V
• Gate Threshold Voltage (Vgs(th)): -1V to -3V

Applications:

• Load Switching: Ideal for switching low-voltage loads.
• Power Management: Suitable for use in power management applications in portable devices.
• Battery-Powered Applications: Commonly used in battery-powered applications due to its low on-resistance and high efficiency.
• DC-DC Converters: Can be used in DC-DC converter circuits for efficient power conversion.

Physical Dimensions:

• Length: Approximately 2.92mm
• Width: Approximately 1.3mm
• Height: Approximately 1.1mm

Pin Configuration:

• Pin 1 (Gate): The gate terminal, which controls the transistor’s switching.
• Pin 2 (Source): The source terminal, which is typically connected to the positive side of the load.
• Pin 3 (Drain): The drain terminal, through which the main current flows when the transistor is in the ‘on’ state.

Electrical Characteristics:

• Vds (Drain-Source Voltage): 30V max
• Vgs (Gate-Source Voltage): ±20V max
• Id (Continuous Drain Current): 1.9A max
• Ptot (Total Power Dissipation): 1.25W max
• Rds(on) (On-Resistance): 0.08Ω typical at Vgs = -10V
• Qg (Total Gate Charge): 9nC typical
• td(on) (Turn-On Delay Time): 15ns typical
• td(off) (Turn-Off Delay Time): 25ns typical

Note: Product images are for illustrative purposes only and may differ from the actual product.